tsm4953d 30v dual p - channel mosfet 1 / 6 version: b 07 sop - 8 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm4953dcs rf sop - 8 2.5kpcs / 13 reel absolute ma ximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds - 30 v gate - source voltage v gs 20 v continuous drain current, v gs @4.5v. i d - 4.9 a pulsed drain current, v gs @4.5v i dm - 20 a continuous source current (diode conduction) a,b i s - 2.6 a ta = 25 o c 2.5 maximum power dissipation ta = 70 o c p d 1.3 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol lim it unit junction to case thermal resistance r? jc 40 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 62.5 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m) i d (a) 60 @ v gs = 10v - 4.9 - 30 90 @ v gs = 4.5v - 3.7 bloc k diagram dual p - channel mosfet pin definition : 1. source 1 8. drain 1 2. gate 1 7. drain 1 3. source 2 6. drain 2 4. gate 2 5. drain 2
tsm4953d 30v dual p - channel mosfet 2 / 6 version: b 07 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = - 250ua bv dss - 30 -- -- v gate threshold voltage v ds = v gs , i d = - 250a v gs(th) - 1.0 - 1.5 - 3.0 v gate body leakage v gs = 2 0 v, v ds = 0v i gss -- -- 100 n a zero gate voltage drain current v ds = - 24 v, v gs = 0v i dss -- -- - 1.0 a on - state drain current a v ds = - 5v, v gs = - 10v i d(on) - 6 -- -- a v gs = - 10v, i d = - 4.9a -- 50 60 drain - source on - state resistance a v gs = - 4.5v, i d = - 3.7a r ds(on) -- 75 90 m forward transconductance a v ds = - 1 5v, i d = - 4.9 a g fs -- 10 -- s diode forward voltage i s = - 1.9a, v gs = 0v v sd -- -- - 1.3 v dynamic b total gate charge q g -- 28 -- gate - sou rce charge q gs -- 3 -- gate - drain charge v ds = - 15v, i d = - 4.9 a, v gs = - 10v q gd -- 7 -- nc input capacitance c iss -- 745 -- output capacitance c oss -- 440 -- reverse transfer capacitance v ds = - 15v, v gs = 0v, f = 1.0mhz c rss -- 120 -- pf switching c turn - on delay time t d(on) -- 9 -- turn - on rise time t r -- 15 -- turn - off delay time t d(off) -- 75 -- turn - off fall time v dd = - 15v , r l = 15 , i d = - 1a, v gen = - 10v, r g = 6 t f -- 40 -- ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to pro duction testing. b. switching time is essentially independent of operating temperature.
tsm4953d 30v dual p - channel mosfet 3 / 6 version: b 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm4953d 30v dual p - channel mosfet 4 / 6 version: b 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pulse power normalized thermal transient impedance, junction - to - ambient
tsm4953d 30v dual p - channel mosfet 5 / 6 version: b 07 sop - 8 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot co de sop - 8 dimension millimeters inches dim min max min max. a 4.80 5.00 0.189 0.196 b 3.8 0 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
tsm4953d 30v dual p - channel mosfet 6 / 6 version: b 07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. informat ion contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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